Improved radiation detectors on 4H-SiC epilayers by edge termination

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dc.contributor.author Oner, Cihan
dc.contributor.author Chowdhury, Towhid A.
dc.contributor.author Pak, Rahmi O.
dc.contributor.author Mandal, Krishna C.
dc.date.accessioned 2023-12-21T06:43:59Z
dc.date.available 2023-12-21T06:43:59Z
dc.date.issued 2016
dc.identifier.citation B.4. Oner, C., Chowdhury, T. A., Pak, R. O., Mandal, K. C. (2016, August). Improved radiation detectors on 4H-SiC epilayers by edge termination. Optical Engineering + Applications 2016 – Part of SPIE Optics + Photonics, 99680M-1-6, San Diego, CA, USA. tr_TR
dc.identifier.uri http://hdl.handle.net/20.500.11787/8348
dc.description.abstract We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based radiation detector. The edge termination method is shown to be very effective for improving both the detector leakage current and radiation detection performance compared with that of a conventional detector fabricated from the same parent wafer. The detector leakage current was found to have improved two orders of magnitude. Significant improvement in radiation detection performance was shown from alpha spectroscopy measurements prior and subsequent to Si3N4 edge termination. Deep Level Transient Spectroscopy (DLTS) measurements revealed a reduction in life-time killing defects of detectors with Si3N4 edge termination which could be related to the observed improvements in radiation detection performance. tr_TR
dc.description.sponsorship The authors would like to acknowledge the support from the Department of Energy (DOE), Nuclear Energy’s Nuclear Energy University Programs (NEUP), Grant No. DE-AC07-051D14517; Los Alamos National Laboratory/DOE, Grant No. 143479; and the Advanced Support for Innovative Research Excellence-I (ASPIRE-I) of the University of South Carolina, Columbia, Grant No. 15530-E404. tr_TR
dc.language.iso eng tr_TR
dc.publisher SPIE tr_TR
dc.relation.isversionof 10.1117/12.2238874 tr_TR
dc.rights info:eu-repo/semantics/openAccess tr_TR
dc.subject Edge Termination tr_TR
dc.subject SiC tr_TR
dc.subject Radiation Detectors tr_TR
dc.title Improved radiation detectors on 4H-SiC epilayers by edge termination tr_TR
dc.type conferenceObject tr_TR
dc.relation.journal Proceedings Volume 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII tr_TR
dc.contributor.department Elektrik-Elektronik Mühendisliği Bölümü tr_TR
dc.contributor.authorID 298671 tr_TR
dc.contributor.authorID 0000-0003-4967-9598 tr_TR


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